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    DPF60IM400HB 0.0 0.4 0.8 1.2 1.6 2.0 20 40 60 80 100 120 0 200 400 600 60 70 80 rr 90 100 110 120 100 101 102 103 104 0.0 0.1 [K/W]0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 0.0 0.2 0.4 0.6 Kf 0.8 1.0 1.2 1.4 1.6 TVJ [°C] -diF/dt [A/μs] t[ms] 0 200 400 600 200 400 600 [ns] 800 1000 1200 1400 1600 1800 4 6 8 10 12 0 200 400 600 0 5 10 15 20 25 30 0 200 400 600 0.0 0.4 0.8 C] 1.2 1.6 Qrr [μ VF [V] Fig. 1 Forward current -diF/dt [A/μs] ZthJC IRM Qrr VFR tfr TVJ = 150°C IF versus VF Fig. 2 Typ. reverse recov. charge Qrr versus -diF/dt Fig. 3 Typ. reverse recovery current IRM versus -diF/dt Fig. 4 Typ. dynamic parameters Qrr,IRM versus TVJ Fig. 5 Typ. reverse recov. time trrversus -diF/dt Fig. 6 Typ. forward recovery voltage VFR & reco. time tfr vs. diF/dt Fig. 8 Transient thermal impedance junction to case 25°C IF [A] -diF/dt [A/μs] IRM [A] t [ns] -diF/dt [A/μs] tfr VFR [V] 0 200 400 600 0 20 40 60 80 Erec [μJ] -diF/dt [A/μs] Fig. 7 Typ. recovery energy Erec versus -diF/dt IF =120 A 60 A 30 A IF = 120 A 60 A 30 A IF = 120 A 60 A 30 A IF= 120 A 60 A 30 A TVJ =125°C VR = 270 V TVJ = 125°C VR = 270 V TVJ =125°C VR =270 V TVJ = 125°C VR =270 V IF = 60 A TVJ = 125°C VR = 270 V Fast Diode IXYS reserves the right to change limits, conditions and dimensions. 20131101a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |